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inchange semiconductor product specification silicon npn power transistors 2SD1565 description ? with to-220 package ? high dc current gain ? darlington ? complement type 2sb1087 applications ? for low frequency power amplifier and power switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current 5 a i cm collector current-peak 10 a i b base current 0.5 a t c =25 ?? 30 p t total power dissipation t a =25 ?? 1.5 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1565 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0 100 v v cesat collector-emitter saturation voltage i c =2a; i b =2ma 1.5 v v besat base-emitter saturation voltage i c =2a; i b =2ma 2.0 v i cbo collector cut-off current v cb =100v ;i e =0 1.0 | a i ebo emitter cut-off current v eb =7v; i c =0 5.0 ma h fe-1 dc current gain i c =2a ; v ce =2v 2000 20000 h fe-2 dc current gain i c =4a ; v ce =2v 500 switching times t on turn-on time 1.0 | s t s storage time 3.5 | s t f fall time i c =2a; i b1 =-i b2 =2ma r l =25 |? ; v cc ?? 50v 1.2 | s ? h fe-1 classifications m l k 2000-5000 4000-10000 8000-20000 inchange semiconductor product specification 3 silicon npn power transistors 2SD1565 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) |
Price & Availability of 2SD1565 |
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